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1

Thermodynamische Berechung des Systems Ge/H2O/H2 und experimentelle Untersuchung mit der Nahabstandsanordnung

Reiner Andrae, Dozent Dr. sc. Ehrenfried Butter

Journal:

Crystal Research and Technology

Year:

1972

File:

PDF, 405 KB

1972

2

Ätzuntersuchungen an Verneuilspinellen

V. Gottschalch, W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1972

Language:

german

File:

PDF, 792 KB

german, 1972

3

Zum Wachstum von AIIIBV-Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink

Dr. K. Jacobs, Dr. B. Jacobs, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1972

File:

PDF, 391 KB

1972

4

Die autoepitaktische Abscheidung von GaAs im System Ga(CH3)3–AsH3–H2

Prof. Dr. sc. W.-H. Petzke, Dipl.-Min. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1973

Language:

german

File:

PDF, 170 KB

german, 1973

5

Ätzuntersuchungen an natürlichen Spaltflächen von (Ga, Al) As/GaAs-Heterostrukturen

Prof. Dr. sc. E. Butter, R. Günther, Dr. B. Jacobs, Dr. K. Jacobs, Dr. P. Streubel, Dr. A. Zehe

Journal:

Crystal Research and Technology

Year:

1973

Language:

german

File:

PDF, 405 KB

german, 1973

6

Epitaktische Abscheidung von GaAs im System Ga(CH3)3AsH3H2 (I) Autoepitaktische Abscheidung

Dr. V. Gottschalch, Dr. W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1974

Language:

german

File:

PDF, 587 KB

german, 1974

7

Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 system (II). Investigations on the Hetero-Epitaxy of GaAs on Ge

Dr. V. Gottschalch, Dr. W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1974

Language:

english

File:

PDF, 554 KB

english, 1974

8

Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 System (III) Heteroepitaxy on Isolating Substrates

Dr. W.-H. Petzke, Dr. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1974

Language:

english

File:

PDF, 416 KB

english, 1974

9

Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations

Dr. W.-H. Petzke, Dr. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1974

Language:

english

File:

PDF, 404 KB

english, 1974

10

Impurity band conduction effects in liquid phase epitaxial Te-doped GaP grown from tin solution

Doz. Dr. sc. H. Neumann, Prof. Dr. E. Butter, Dr. P. Kramer, Dipl.-Phys. W. Kohl, Dr. H.-G. Ernst

Journal:

Crystal Research and Technology

Year:

1978

Language:

english

File:

PDF, 300 KB

english, 1978

11

Untersuchungen zur heteroepitaktischen Abscheidung von GaP auf GaAs aus der Sn-Lösung

Dr. V. Gottschalch, Dr. P. Kramer, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1978

Language:

german

File:

PDF, 643 KB

german, 1978

12

Thermodynamische Studien an AIII-BV-Verbindungen. Vergleich der thermodynamischen Konsistenz verschiedener Modellansätze für Aktivitätskoeffizenten

Dipl.-Chem. G.-P. Peuschel, Dipl.-Chem. R. Apelt, Dr. G. Knobloch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1979

Language:

german

File:

PDF, 196 KB

german, 1979

13

H3PO4 — etching of {001}-faces of InP, (GaIn)P, GaP, and Ga(AsP)

Dr. V. Gottschalch, W. Heinig, Prof. Dr. sc. E. Butter, Dr. H. Rosin, G. Freydank

Journal:

Crystal Research and Technology

Year:

1979

Language:

english

File:

PDF, 1.31 MB

english, 1979

14

Thermodynamic Studies on Ternary Mixed III-V Systems

Dr. G.-P. Peuschel, Dr. G. Knobloch, Prof. Dr. sc. E. Butter, Dr. R. Apelt

Journal:

Crystal Research and Technology

Year:

1981

Language:

english

File:

PDF, 259 KB

english, 1981

15

Experimental Determination and Thermodynamic Calcultions of the Relationship between Vapour Phase Composition and Mixed Crystal Composition in the Ga-HCI-PH3-AsH3-(NH3)-H2 System

Dr. K. Jacobs, Dr. G.-P. Peuschel, R. Peuschel, R. Probst, Dr. Sc. E. Butter, Dr. F. Bugge

Journal:

Crystal Research and Technology

Year:

1981

Language:

english

File:

PDF, 517 KB

english, 1981

16

Krupkowski's formalism and the stability condition for homogeneous phases

Dr. G. Knobloch, Dr. R. Apelt, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1983

Language:

english

File:

PDF, 72 KB

english, 1983

17

Growth mechanisms in GaAs-VPE at low deposition temperature

S. Schwetlick, Dr. sc. W. Seifert, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1985

Language:

english

File:

PDF, 352 KB

english, 1985

18

Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3 · N(CH3)3-Adduct Pyrolysis

Dr. sc. W. Seifert, R. Franzheld, F. Bönisch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1986

Language:

english

File:

PDF, 436 KB

english, 1986

19

Influence of Predeposition on the Properties of GaN

R. Franzheld, Dozent Dr. sc. W. Seifert, Prof. Dr. s.c. E. Butter

Journal:

Crystal Research and Technology

Year:

1986

Language:

english

File:

PDF, 449 KB

english, 1986

20

Chemical etching and polishing of InP

Dr. E. Kurth, Dr. A. Reif, Dr. V. Gottschalch, Dr. sc. J. Finster, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1988

Language:

english

File:

PDF, 516 KB

english, 1988

21

Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH3)3 · N(CH3)3-adduct as precursor

Doz. Dr. sc. W. Seifert, K. Ploska, Dr. S. Schwetlick, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1989

Language:

english

File:

PDF, 262 KB

english, 1989

22

Evaporation Behaviour of TMIn-TMN Adduct Determined by flame Ionization Detection

Dipl.-Chem. S. Hagen, Dr. sc. Dozent W. Seifert, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Year:

1992

Language:

english

File:

PDF, 232 KB

english, 1992